PART |
Description |
Maker |
BCR3AM-14B-15 |
Triac Low Power Use
|
Renesas Electronics Corporation
|
BCR08AS-12A-T14 BCR08AS-12A |
Triac Low Power Use
|
Renesas Electronics Corporation
|
BCR1AM-12A10 |
Triac Low Power Use
|
Renesas Electronics Corporation
|
BCR08ES-14A BCR08ES-14AT14B11 BCR08ES-14AT14B10 |
700V - 0.8A - Triac Low Power Use
|
Renesas Electronics Corporation
|
BCR1AM-14A BCR1AM-14A-1TB BCR1AM-14A-A6 BCR1AM-14A |
700V-1A-Triac Low Power Use
|
Renesas Electronics Corporation
|
BCR1BM-16AB00 |
800V - 1A - Triac Low Power Use
|
Renesas Electronics Corporation
|
BCR08DS-14A13 BCR08DS-14AT13B10 BCR08DS-14AT13B12 |
700V-0.8A-Triac Low Power Use
|
Renesas Electronics Corporation
|
BCR12PM-12LB-A8 BCR12PM-12LB-15 |
600 V, 12 A, TRIAC, TO-220AB TO-220F, 3 PIN Triac Medium Power Use (The product guaranteed maximum junction temperature of 150?C)
|
Lattice Semiconductor, Corp. Renesas Electronics Corporation
|
BCR10PM-12LB-A8 |
600 V, 10 A, TRIAC, TO-220AB TO-220FN, 3 PIN Triac Medium Power Use (The product guaranteed maximum junction temperature of 150?C)
|
Lattice Semiconductor, Corp. Renesas Electronics Corporation
|
BCR1AM-8 |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE PLANAR PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
CQ202-4M CQ202-4N CQ202-4D CQ202-4B |
TRIAC|200V V(DRM)|4A I(T)RMS|TO-202 可控硅| 200伏五(DRM)的| 4A条口T)的有效值|02 TRIAC|400V V(DRM)|4A I(T)RMS|TO-202 From old datasheet system 4.0 AMP TRIAC 600 THRU 800 VOLTS Leaded Thyristor TRIAC
|
Unisonic Technologies Co., Ltd. Central Semiconductor Corp.
|